NOT KNOWN FACTS ABOUT N TYPE GE

≤ 0.fifteen) is epitaxially developed on the SOI substrate. A thinner layer of Si is developed on this SiGe layer, after which the construction is cycled by means of oxidizing and annealing phases. Mainly because of the preferential oxidation of Si over Ge [sixty eight], the initial Si1–Polycrystalline Ge skinny movies have attracted substantia